1. | only \(D_3\) | 2. | \(D_1\) and \(D_3\) |
3. | all of the diodes | 4. | none of the diodes |
1. | ![]() |
2. | ![]() |
3. | ![]() |
4. | ![]() |
1. | (\(A\) AND \(B\)) | 2. | (\(A\) OR \(B\)) |
3. | (\(B\) OR \(C\)) | 4. | none of the above |
1. | increases. |
2. | decreases. |
3. | remains constant. |
4. | may increase or decrease depending on bias. |
1. | \(\vec{E}\) and cause a current opposite to \(\vec{E}\) | flow in the direction of the
2. | \(\vec{E}\) and cause a current along \(\vec{E}\) | flow opposite to
3. | \(\vec{E}\) and cause a current along \(\vec{E}\) | flow along
4. | \(\vec{E}\) and cause a current opposite to \(\vec{E}\) | flow opposite to
Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
1. | Statement I is incorrect and Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct and Statement II is incorrect. |
1. | \(A\) AND \(B\) | 2. | \(A\) OR \(B\) |
3. | \(A\) | 4. | \(B\) |
List-I | List-II | ||
(a) | Intrinsic semiconductor | (e) | Prepared by adding phosphorus |
(b) | \(\mathrm{n}\text-\)type semiconductor | (f) | The width is nearly one micron |
(c) | \(\mathrm{p}\text-\)type semiconductor | (g) | Silicon |
(d) | Depletion layer | (h) | Prepared by adding indium |
1. | (a)-(g), (b)-(e), (c)-(h), (d)-(f) |
2. | (a)-(h), (b)-(f), (c)-(e), (d)-(g) |
3. | (a)-(e), (b)-(g), (c)-(f), (d)-(h) |
4. | (a)-(f), (b)-(h), (c)-(g), (d)-(e) |