A silicon wafer of \(\mathrm{n}\)-type material with a cross-sectional area of \(3.14\times 10^{-6}\) m2, a conductivity of \(5.8\times 10^{7} \) siemens per metre, and an electron mobility of \(0.0032\) m2V–1s–1 is subjected to an electric field of \(20\) milli-V/m. (neglect hole concentration)
Match the items in Column-I with those in Column-II:
Column-I | Column-II | ||
(A) | The electron concentration in the wafer is | (P) | \(1.16\times 10^6\) SI units |
(B) | The current density in the wafer is | (Q) | \(3.64\) SI units |
(C) | The current flowing through the wafer is | (R) | \(6.4\times 10^{-5}\) SI units |
(D) | The drift velocity of electrons is | (S) | \(1.13\times 10^{29}\) SI units |
1. | A(P), B(Q), C(R), D(S) |
2. | A(P), B(S), C(R), D(Q) |
3. | A(S), B(P), C(Q), D(R) |
4. | A(Q), B(P), C(R), D(S) |
1. | \(3.75~\text{V}\) | 2. | \(4.25~\text{V}\) |
3. | \(4~\text{V}\) | 4. | \(0.375~\text{V}\) |
1. | \(\dfrac{\sigma_1 \sigma_2}{\sigma_1+\sigma_2} \) | 2. | \(\dfrac{2 \sigma_1 \sigma_2}{\sigma_1+\sigma_2} \) |
3. | \(\dfrac{\sigma_1+\sigma_2}{2 \sigma_1 \sigma_2} \) | 4. | \(\dfrac{\sigma_1+\sigma_2}{\sigma_1 \sigma_2}\) |
1. | \(\dfrac {2.0 ~\times~10^{-3}}{\pi} ~\Omega\) | 2. | \(5.0 ~\times~10^{-13}\pi~\Omega\) |
3. | \(\dfrac {1.0}{2\pi}~\Omega\) | 4. | \(\dfrac{2.0}{\pi}~\Omega\) |
Statement I: | Kirchhoff’s current law is a consequence of the conservation of energy as applied to electric circuits. |
Statement II: | Kirchhoff’s voltage law is a consequence of the conservation of charge. |
1. | Statement I is incorrect and Statement II is correct. |
2. | Both Statement I and Statement II are correct. |
3. | Both Statement I and Statement II are incorrect. |
4. | Statement I is correct and Statement II is incorrect. |
The current in a simple series circuit is \(5.0\) A. When an additional resistance of \(2.0\) \(\Omega\) is inserted, the current decreases to \(4.0\) A. The original resistance of the circuit was:
1. \(1.25\) \(\Omega\)
2. \(8\) \(\Omega\)
3. \(10\) \(\Omega\)
4. \(20\) \(\Omega\)