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The cut-off voltage of the diodes (shown in the figure) in forward bias is \(0.6~\text{V}\). The current through the resister of \(40~ \Omega\) is:
                     
1. \(2~\text{mA}\)
2. \(4~\text{mA}\)
3. \(6~\text{mA}\)
4. \(8~\text{mA}\)

Subtopic:  PN junction |
 78%
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Which doping element is used to make an \(\mathrm{n\text-}\)type semiconductor?
1. Boron 2. Phosphorous
3. Aluminium 4. Gallium
Subtopic:  Types of Semiconductors |
 85%
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The incorrect statement about the property of a Zener diode is:
1. Zener voltage remains constant at the breakdown.
2. It is designed to operate under reverse bias.
3. The depletion region formed is very wide.
4. \(\mathrm{p}\) and \(\mathrm{n}\) regions of the Zener diode are heavily doped.
Subtopic:  Applications of PN junction |
 57%
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NEET - 2022
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NEET 2025 - Target Batch
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The electrical conductivity of a semiconductor increases when electromagnetic radiation with a wavelength shorter than \(2400~\text{nm}\) is incident on it. The band gap of the semiconductor (in eV) is: \((h=6.63\times10^{-34}~\text{J-s})\)
1. \(0.33\) eV 2. \(0.80\) eV
3. \(0.52\) eV 4. \(0.10\) eV
Subtopic:  Energy Band theory |
 77%
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A piece of iron and a piece of germanium are cooled from the \(400~\text{K}\) temperature down to \(77~\text{K}\).
Then:
1. the resistance of each of them increases
2. the resistance of each of them decreases
3. the resistance of iron increases and that of germanium decreases
4. the resistance of iron decreases and that of germanium increases
Subtopic:  Types of Semiconductors |
 75%
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A potential barrier of \(0.4~\text{V}\) exists across a p-n junction. An electron enters the junction from the n-side with a speed of \(6.0\times10^{5}~\text{ms}^{-1}\). The speed with which the electron enters the p-side will be \(\frac{\mathrm{x}}{3} \times 10^{5} \mathrm{~ms}^{-1}\) The value of \(\mathrm{x}\) is:
(Given the mass of electron = \(9\times 10^{-31}~\text{kg}\), charge on electron = \(1.6\times 10^{-19}~\text{C}\).)
1. \(10\)
2. \(12\)
3. \(14\)
4. \(16\)
Subtopic:  PN junction |
 58%
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Two ideal diodes are connected in the network as shown in the figure. The equivalent resistance between \(A\) and \(B\) is:
        
1. \(15~\Omega\)
2. \(25~\Omega\)
3. \(35~\Omega\)
4. \(45~\Omega\)
Subtopic:  PN junction |
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Given below are two statements: 
Assertion (A): The temperature coefficient of resistance is positive for metals and negative for \(\mathrm{p\text-}\)type semiconductors.
Reason (R): The effective charge carriers in metals are negatively charged whereas in \(\mathrm{p\text-}\)type semiconductors, they are positively charged.
 
1. Both (A) and (R) are True and (R) is the correct explanation of (A).
2. Both (A) and (R) are True but (R) is not the correct explanation of (A).
3. (A) is True but (R) is False.
4. Both (A) and (R) are False.
Subtopic:  Energy Band theory |
 55%
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The diode used in the circuit shown in the figure has a constant voltage drop of \(0.5\) V at all currents and a maximum power rating of \(100~\text{mW.}\) What should be the value of the resistor \(R,\) connected in series with the diode for obtaining maximum current?
1. \(1.5~\Omega\) 2. \(5~\Omega\)
3. \(6.67~\Omega\) 4. \(200~\Omega\)
Subtopic:  PN junction |
 67%
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Given below are two statements: 
Assertion (A): The value of current through \(\mathrm{p\text-n}\) junction in the given figure will be \(10~\text{mA}.\)
 
Reason (R): In the above figure, \(\mathrm{p\text-}\)side is at a higher potential than \(\mathrm{n\text-}\)side.
 
1. Both (A) and (R) are True and (R) is the correct explanation of (A).
2. Both (A) and (R) are True but (R) is not the correct explanation of (A).
3. (A) is True but (R) is False.
4. Both (A) and (R) are False.
Subtopic:  PN junction |
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