1. | Boron | 2. | Phosphorous |
3. | Aluminium | 4. | Gallium |
1. | Zener voltage remains constant at the breakdown. |
2. | It is designed to operate under reverse bias. |
3. | The depletion region formed is very wide. |
4. | \(\mathrm{p}\) and \(\mathrm{n}\) regions of the Zener diode are heavily doped. |
1. | \(0.33\) eV | 2. | \(0.80\) eV |
3. | \(0.52\) eV | 4. | \(0.10\) eV |
1. | the resistance of each of them increases |
2. | the resistance of each of them decreases |
3. | the resistance of iron increases and that of germanium decreases |
4. | the resistance of iron decreases and that of germanium increases |
Assertion (A): | The temperature coefficient of resistance is positive for metals and negative for \(\mathrm{p\text-}\)type semiconductors. |
Reason (R): | The effective charge carriers in metals are negatively charged whereas in \(\mathrm{p\text-}\)type semiconductors, they are positively charged. |
1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
3. | (A) is True but (R) is False. |
4. | Both (A) and (R) are False. |
1. | \(1.5~\Omega\) | 2. | \(5~\Omega\) |
3. | \(6.67~\Omega\) | 4. | \(200~\Omega\) |
Assertion (A): | The value of current through \(\mathrm{p\text-n}\) junction in the given figure will be \(10~\text{mA}.\) |
Reason (R): | In the above figure, \(\mathrm{p\text-}\)side is at a higher potential than \(\mathrm{n\text-}\)side. |
1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
3. | (A) is True but (R) is False. |
4. | Both (A) and (R) are False. |