An electric field is applied to a semiconductor. Let the number of charge carriers be \(n\) and the average drift speed be \(v.\) If the temperature is increased, then:
1. | both \(n\) and \(v\) will increase. |
2. | \(n\) will increase but \(v\) will decrease. |
3. | \(v\) will increase but \(n\) will decrease. |
4. | both \(n\) and \(v\) will decrease. |
Let \(n_{p}\) and \(n_{e}\) be the number of holes and conduction electrons in an intrinsic semiconductor. Then:
1. \(n_{p}> n_{e}\)
2. \(n_{p}= n_{e}\)
3. \(n_{p}< n_{e}\)
4. \(n_{p}\neq n_{e}\)
In a semiconductor;
(A) | there are no free electrons at \(0^\circ\text{K}.\) |
(B) | there are no free electrons at any temperature. |
(C) | the number of free electrons increases with temperature. |
(D) | the number of free electrons is less than that in a conductor. |
1. | (A) and (B) only |
2. | (B) and (C) only |
3. | (A), (C), and (D) only |
4. | (A), (B), and (D) only |
1. | \(\dfrac{30}{\sqrt2}~\text{V}\) | 2. | \(15 ~\text{V}\) |
3. | \(\dfrac{15}{\sqrt2}~\text{V}\) | 4. | \(10 ~\text{V}\) |
1. | metals |
2. | intrinsic semiconductors |
3. | \(\mathrm{p} \text-\)type extrinsic semiconductors |
4. | \(\mathrm{n} \text-\)type extrinsic semiconductors |
1. | \(\dfrac{1}{7}\) A | 2. | \(\dfrac{1}{6}\) A |
3. | \(\dfrac{1}{25}\) A | 4. | \(\dfrac{1}{180}\) A |
1. | \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\) |
2. | \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\) |
3. | \(100~\Omega\) |
4. | \(200~\Omega\) |
1. | \(120\) Hz | 2. | zero |
3. | \(30\) Hz | 4. | \(60\) Hz |
1. | decreases for conductors but increases for semiconductors. |
2. | increases for both conductors and semiconductors. |
3. | decreases for both conductors and semiconductors. |
4. | increases for conductors but decreases for semiconductors. |
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