In a body-centred cubic structure, the coordination number of atoms is
1. 12
2. 8
3. 1
4. 4
The relation between the atomic mass of unknown metal with density and the dimension of its unit cell is given by :
(Given: All the cell edge lengths are equal)
1. \(m \ = \ \frac{\rho a^{3}N_{A}}{Z} \)
2. \(m \ = \ \rho a^{3}N_{A}Z\)
3. \(m \ = \ \frac{Z}{\rho a^{3}N_{A}}\)
4. \(m \ = \ \frac{ZN_{A}}{a^{3}\rho}\)
The correct statement among the following is -
1. | Semiconductors have a small energy gap between the valence band and the conduction band. |
2. | Conductors have overlapped valence band and conduction band. |
3. | Insulators have a large energy gap between the valence band and conduction band. |
4. | All of the above. |
A defect that has an equal number of missing cations and anions is:
1. Schottky defect.
2. Frenkel defect.
3. Both (1) and (2)
4. None of the above.
The magnetic substances that have lesser magnetic moment than expected is known as -
1. Paramagnetic.
2. Ferrimagnetic.
3. Antiferromagnetic.
4. None of the above.
The number of tetrahedral and octahedral voids in hexagonal primitive unit cell are respectively:
1. 2, 1
2. 12, 6
3. 8, 4
4. 6, 12
NaCl is doped with 10−3 mol % of SrCl2. The number of cation vacancies post doping would be -
1. 4.022 × 108
2. 5.022 × 1018
3. 6.022 × 1018
4. 7.022 × 108
Aluminum crystallizes in a cubic close-packed structure. It's metallic radius is 125 pm. The number of unit cells in 1.00 cm3 of aluminum are :
1. 2.27 x 1022
2. 354 x 1022
3. 4.54 x 1022
4. 127 x 1020
(i) Ge is doped with In
(ii) Si is doped with B.
The semiconductors formed in the above cases are :
1. (i) n-type semiconductor (ii) p-type semiconductor .
2. (i) p-type semiconductor (ii) n-type semiconductor .
3. p-type semiconductor in both the cases.
4. n-type semiconductor in both the cases.
Higher conductivity of p-type and n-type semiconductors is due to:
1. | Increase in the number of positive holes and mobile electrons respectively. |
2. | Increase in the number of electrons in both types of semiconductors. |
3. | Increase in the number of positive-holes in both types of semiconductors. |
4. | None of the above. |