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Q. No.
Subtopic: Logic gates |
76%
Level 2: 60%+
JEE
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Which of the diode circuit shows correct biasing used for the measurement of dynamic resistance of p-n junction diode –
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: PN junction |
85%
Level 1: 80%+
JEE
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The I-V characteristics of an electronic device shown in the figure. The device is:
1. a transistor which can be used as an amplifier
2. a solar cell
3. a zener diode which can be used as a voltage regulator
4. a diode which can be used as a rectifier
Subtopic: Applications of PN junction |
89%
Level 1: 80%+
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| A | B | E |
| 0 | 0 | 0 |
| 0 | 1 | X |
| 1 | 0 | Y |
| 1 | 1 | 0 |
In the truth table of the above circuit the value of X and Y are:
1. 1, 1
2. 0, 1
3. 0, 0
4. 1, 0Subtopic: Logic gates |
79%
Level 2: 60%+
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A light emitting diode (LED) is fabricated using GaAs semiconducting material whose band gap is \(1.42\) eV. The wavelength of light emitted from the LED is :
1. \(875\) nm
2. \(1400\) nm
3. \(1243\) nm
4. \(650\) nm
1. \(875\) nm
2. \(1400\) nm
3. \(1243\) nm
4. \(650\) nm
Subtopic: Applications of PN junction |
86%
Level 1: 80%+
JEE
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The acceptor level of a p-type semiconductor is \(6\) eV. The maximum wavelength of light which can create a hole would be : Given \(h c=1242\) eV-nm.
1. \(407\) nm
2. \(207\) nm
3. \(103.5\) nm
4. \(414\) nm
Subtopic: Energy Band theory |
91%
Level 1: 80%+
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Subtopic: Logic gates |
82%
Level 1: 80%+
JEE
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\(\mathrm{Ge ~and ~Si}\) diodes start conducting at \(0.3~\text{V}~\text{and}~0.7~\text{V}\) respectively. In the following figure if \(\mathrm{Ge}\) diode connection are reversed, the value of \({V}_0\) changes by:
(assume that the \(\mathrm{Ge}\) diode has a large breakdown voltage)
1. \(0.8~\text{V}\)
2. \(0.6~\text{V}\)
3. \(0.2~\text{V}\)
4. \(0.4~\text{V}\)
(assume that the \(\mathrm{Ge}\) diode has a large breakdown voltage)
1. \(0.8~\text{V}\)
2. \(0.6~\text{V}\)
3. \(0.2~\text{V}\)
4. \(0.4~\text{V}\)
Subtopic: Applications of PN junction |
56%
Level 3: 35%-60%
JEE
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In the given circuit the current through the Zener diode is:
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
Subtopic: Applications of PN junction |
67%
Level 2: 60%+
JEE
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What is the conductivity of a semiconductor sample having electron concentration of \(5\times10^{18}~\text{m}^{-3},\) hole concentration of \(5\times10^{19}~\text{m}^{-3},\) electron mobility of \(2.0~\text{m}^2~\text{V}^{-1}\text{s}^{-1}\) and hole mobility of \(0.01~\text{m}^2\text{V}^{-1}~\text{s}^{-1}?\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
Subtopic: Types of Semiconductors |
71%
Level 2: 60%+
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