One part of a device is connected to the negative terminal of a battery and the other part is connected to the positive terminal of a battery. If their ends are now altered, current does not flow in circuit. The device is:
1. \(\mathrm{p\text-n}\) Junction
2. Transistor
3. Zener diode
4. Triode
1. | Concentration of positive and negative ions near the junction. |
2. | Concentration of positive charges near the junction. |
3. | Depletion of negative charges near the junction. |
4. | Increment in concentration of holes and electrons near the junction. |
The depletion layer has (for an unbiased \(\mathrm{p\text-n}\) junction):
1. electrons
2. holes
3. static ions
4. neutral atoms
From the following diode circuit, which diode is in forward biased condition:
1. | 2. | ||
3. | 4. |
The current \((I)\) in the circuit will be:
1. | \(\dfrac{5}{40}~\text{A}\) | 2. | \(\dfrac{5}{50}~\text{A}\) |
3. | \(\dfrac{5}{10}~\text{A} \) | 4. | \(\dfrac{5}{20}~\text{A}\) |
1. | High potential at the \(\mathrm{n}\) side and low potential at the \(\mathrm{p}\) side. |
2. | High potential at the \(\mathrm{p}\) side and low potential at the \(\mathrm{n}\) side. |
3. | \(\mathrm{p}\) and \(\mathrm{n}\) both are at the same potential. |
4. | Undetermined. |
For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?
1. | In F.B. the voltage across \(R\) is \(V\). |
2. | In R.B. the voltage across \(R\) is \(V\). |
3. | In F.B. the voltage across \(R\) is \(2V\). |
4. | In R.B. the voltage across \(R\) is \(2V\). |
Reverse-bias applied to a junction diode:
1. | lowers the potential barrier |
2. | raises the potential barrier |
3. | increases the majority carrier current |
4. | increases the minority carrier's current |
The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | 2. | ||
3. | 4. |