In a \(\mathrm{p\text{-}n}\) junction diode, the change in temperature due to heating:
1. | affects only reverse resistance. |
2. | affects only forward bias. |
3. | does not affect the resistance of the \(\mathrm{p\text{-}n}\) junction. |
4. | affects the overall \(\mathrm{V\text{-}I}\) characteristics of a \(\mathrm{p\text{-}n}\) junction. |
The given electrical network is equivalent to:
1. | \(\text{OR}\) gate | 2. | \(\text{NOR}\) gate |
3. | \(\text{NOT}\) gate | 4. | \(\text{AND}\) gate |
Which one of the following represents the forward bias diode?
1. | |
2. | |
3. | |
4. |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
1. \(2.5~\text{A}\)
2. \(10.0~\text{A}\)
3. \(1.43~\text{A}\)
4. \(3.13~\text{A}\)
What is the output \(Y\) in the following circuit, when all the three inputs \(A\), \(B\), and \(C\) are first \(0\) and then \(1\)?
1. | \(0,1\) | 2. | \(0,0\) |
3. | \(1,0\) | 4. | \(1,1\) |
To get output \(Y=1\) for the following circuit, the correct choice for the input is:
1. | \(A=1,~ B= 0, ~C=0\) |
2. | \(A=1,~ B= 1, ~C=0\) |
3. | \(A=1,~ B= 0, ~C=1\) |
4. | \(A=0,~ B= 1, ~C=0\) |
Consider the junction diode as an ideal. The value of current flowing through \(AB\) is:
1. \(10^{-2}~\text{A}\)
2. \(10^{-1}~\text{A}\)
3. \(10^{-3}~\text{A}\)
4. \(0~\text{A}\)
In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)
If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown,
then the output across \(R_L\) will be:
1. | 2. | ||
3. | 4. |
Which logic gate is represented by the following combination of logic gates?