Select Chapter Topics:
Q. No.In a forward-biased \(\mathrm{p\text-n}\) junction diode, the potential barrier in the depletion region is of the form of:
1.
2.
3.
4.
Subtopic: Â PN junction |
 68%
Level 2: 60%+
Hints
The electrical circuit used to get smooth DC output from a rectifier circuit is called:
1. logic gate
2. amplifier
3. filter
4. oscillator
1. logic gate
2. amplifier
3. filter
4. oscillator
Subtopic: Â Rectifier |
 66%
Level 2: 60%+
Hints
A full wave rectifier circuit along with the input and output voltages is shown in the figure. The contribution to the output voltage from diode-\(2\) is:
| 1. | \(A,C\) | 2. | \(B,D\) |
| 3. | \(B,C\) | 4. | \(A,D\) |
Subtopic: Â Rectifier |
 81%
Level 1: 80%+
Hints
What is responsible for the formation of the depletion layer across the \(\mathrm{p\text-n}\) junction?
| 1. | Drift of holes. |
| 2. | Drift of electrons. |
| 3. | Diffusion of holes and electrons. |
| 4. | Absence of diffusion of holes and electrons. |
Subtopic: Â PN junction |
 83%
Level 1: 80%+
Hints
The charge on a \(\mathrm{p}\)-type semiconductor is:
| 1. | neutral |
| 2. | negative |
| 3. | positive |
| 4. | may be positive or negative |
Subtopic: Â Types of Semiconductors |
 74%
Level 2: 60%+
Hints
The energy band gap of semiconducting material to produce violet (wavelength \(=4000~\mathring{A}\)) LED is (nearly):
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
1. \(3~\text{eV}\)
2. \(5~\text{eV}\)
3. \(1~\text{eV}\)
4. \(7~\text{eV}\)
Subtopic: Â Energy Band theory |
 86%
Level 1: 80%+
Hints
The dynamic resistance of a diode is given by; \(R=\dfrac{26}{i(\text{mA})}~\Omega,\) where \(i\) is the diode current.
| Statement I: | If the current through the diode increases, then the dynamic resistance decreases. |
| Statement II: | If the temperature of the diode is increased, with the potential difference fixed, the dynamic resistance decreases. |
| 1. | Statement I is incorrect and Statement II is correct. |
| 2. | Both Statement I and Statement II are correct. |
| 3. | Both Statement I and Statement II are incorrect. |
| 4. | Statement I is correct and Statement II is incorrect. |
Subtopic: Â PN junction |
 73%
Level 2: 60%+
Hints
Potential barrier across a \(\mathrm{p\text-n}\) junction is \(0.6\) V. Electric field intensity, in the depletion region having a width of \(6\times10^{-6}\) m, will be:
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
1. \(1\times10^{5}\) N/C
2. \(2\times10^{5}\) N/C
3. \(3\times10^{5}\) N/C
4. \(4\times10^{5}\) N/C
Subtopic: Â PN junction |
 92%
Level 1: 80%+
Hints
An intrinsic Germanium \(\mathrm{(Ge)}\) semiconductor having \(2.5 \times 10^{29}\) atoms per \(\text m^3\) is doped uniformly by trivalent aluminium at \(1~\text{ppm}.\)If the thermally generated electron concentration at room temperature is \(n_i=10^{17}/\text m^3,\) the resulting electron concentration after doping at the same temperature will be:
1. \(2.5 \times 10^{29}~\text m^{-3}\)
2. \(4 \times 10^{10}~\text m^{-3}\)
3. \(2.5 \times 10^{18}~\text m^{-3}\)
4. \(4 \times 10^{20}~\text m^{-3}\)
1. \(2.5 \times 10^{29}~\text m^{-3}\)
2. \(4 \times 10^{10}~\text m^{-3}\)
3. \(2.5 \times 10^{18}~\text m^{-3}\)
4. \(4 \times 10^{20}~\text m^{-3}\)
Subtopic: Â Types of Semiconductors |
 73%
Level 2: 60%+
Hints
A \(\mathrm{Ge}\) specimen is doped with \(\mathrm{Al}.\) The concentration of acceptor atoms is approximately \(10^{24}~\text{m}^{-3}.\) Given that intrinsic carrier concentration is nearly \(10^{19}~\text{m}^{-3},\) then the concentration of electrons in the specimen is nearly:
1. \(10^{10}~\text{m}^{-3}\)
2. \(10^{14}~\text{m}^{-3}\)
3. \(10^{19}~\text{m}^{-3}\)
4. \(10^{18}~\text{m}^{-3}\)
1. \(10^{10}~\text{m}^{-3}\)
2. \(10^{14}~\text{m}^{-3}\)
3. \(10^{19}~\text{m}^{-3}\)
4. \(10^{18}~\text{m}^{-3}\)
Subtopic: Â Types of Semiconductors |
 83%
Level 1: 80%+
Hints
Select Chapter Topics:
© 2026 GoodEd Technologies Pvt. Ltd.