Identify the incorrect statement from the following:
1. | The resistivity of a semiconductor increases with an increase in temperature. |
2. | Substances with an energy gap of the order of 10 eV are insulators. |
3. | In conductors, the valence and conduction bands may overlap. |
4. | The conductivity of a semiconductor increases with an increase in temperature. |
Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
1. | 2. | ||
3. | 4. |
For the given circuit of the P-N junction diode, which of the following statements is correct?
1. | In F.B. the voltage across R is V. |
2. | In R.B. the voltage across R is V. |
3. | In F.B. the voltage across R is 2V. |
4. | In R.B. the voltage across R is 2V. |
Reverse-bias applied to a junction diode:
1. | lowers the potential barrier |
2. | raises the potential barrier |
3. | increases the majority carrier current |
4. | increases the minority carrier's current |
The barrier potential of a p-n junction diode does not depend on:
1. diode design
2. temperature
3. forward bias
4. doping density
In a half-wave rectification, what is the output frequency if the input frequency is \(50\) Hz?
1. | \(50~\text{Hz}\) | 2. | \(100~\text{Hz}\) |
3. | \(25~\text{Hz}\) | 4. | \(60~\text{Hz}\) |
In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an:
1. | p-type semiconductor |
2. | insulator |
3. | metal |
4. | n-type semiconductor |
The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R1 will be:
1. | 2.5 A | 2. | 10.0 A |
3. | 1.43 A | 4. | 3.13 A |
The depletion layer in the P–N junction region is caused by:
1. | the drift of holes |
2. | diffusion of charge carriers |
3. | migration of impurity ions |
4. | drift of electrons |
The LED:
1. is reverse-biased.
2. is forward-biased.
3. can be made of GaAs.
4. both (2) & (3) are correct.