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Q. No.
Which is the correct truth table for a given circuit?
| 1. | \(A\) | \(B\) | \(Z\) | 2. | \(A\) | \(B\) | \(Z\) | |
| \(0\) | \(0\) | \(1\) | \(0\) | \(0\) | \(0\) | |||
| \(0\) | \(1\) | \(1\) | \(0\) | \(1\) | \(1\) | |||
| \(1\) | \(0\) | \(1\) | \(1\) | \(0\) | \(1\) | |||
| \(1\) | \(1\) | \(0\) | \(1\) | \(1\) | \(0\) | |||
| 3. | \(A\) | \(B\) | \(Z\) | 4. | \(A\) | \(B\) | \(Z\) | |
| \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | |||
| \(0\) | \(1\) | \(0\) | \(0\) | \(1\) | \(1\) | |||
| \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | \(0\) | |||
| \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | |||
Subtopic: Logic gates |
92%
Level 1: 80%+
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A \(2~\text V\) battery is connected across \({AB}\) as shown in the figure. The value of the current supplied by the battery when in one case battery's positive terminal is connected to \(A\) and in another case when the positive terminal of the battery is connected to \({B}\) will respectively be:
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
1. \(0.4~\text{A}\) and \(0.2~\text{A}\)
2. \(0.2~\text{A}\) and \(0.4~\text{A}\)
3. \(0.1~\text{A}\) and \(0.2~\text{A}\)
4. \(0.2~\text{A}\) and \(0.1~\text{A}\)
Subtopic: Applications of PN junction |
80%
Level 1: 80%+
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The value of the resistor \({R_s},\) needed in the DC voltage regulator circuit shown here, equals:
1. \({\frac{\left(V_i-V_L\right)}{(n+1) I_L}}\)
2. \({\frac{\left(V_i+V_L\right)}{(n+1) I_L}}\)
3. \({\frac{\left(V_i-V_L\right)}{n I_L}}\)
4. \({\frac{\left(V_i+V_L\right)}{n I_L}}\)
1. \({\frac{\left(V_i-V_L\right)}{(n+1) I_L}}\)
2. \({\frac{\left(V_i+V_L\right)}{(n+1) I_L}}\)
3. \({\frac{\left(V_i-V_L\right)}{n I_L}}\)
4. \({\frac{\left(V_i+V_L\right)}{n I_L}}\)
Subtopic: Applications of PN junction |
75%
Level 2: 60%+
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In the voltage regulator circuit shown below, the reverse breakdown voltage of the Zener diode is \(3~\text{V}.\)Then the current through the Zener diode is:
1. \(7~\text{mA}\)
2. \(1.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(10~\text{mA}\)
1. \(7~\text{mA}\)
2. \(1.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(10~\text{mA}\)
Subtopic: PN junction |
71%
Level 2: 60%+
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In an unbiased p-n junction electrons diffuse from the n-region to the p-region because:
| 1. | electrons travel across the junction due to potential difference |
| 2. | electron concentration in the n-region is more as compared to that in the p-region |
| 3. | only electrons move from the n to p region and not the vice-versa. |
| 4. | holes in the p-region attract them |
Subtopic: PN junction |
71%
Level 2: 60%+
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The truth table for the combination of logical gates
| 1. | \(A\) | \(B\) | \(C\) | 2. | \(A\) | \(B\) | \(C\) | |
| \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | |||
| \(0\) | \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | |||
| \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | \(1\) | |||
| \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | |||
| 3. | \(A\) | \(B\) | \(C\) | 4. | \(A\) | \(B\) | \(C\) | |
| \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | \(0\) | |||
| \(0\) | \(1\) | \(1\) | \(0\) | \(1\) | \(1\) | |||
| \(1\) | \(0\) | \(0\) | \(1\) | \(0\) | \(0\) | |||
| \(1\) | \(1\) | \(1\) | \(1\) | \(1\) | \(0\) | |||
Subtopic: Logic gates |
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Level 2: 60%+
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What is the conductivity of a semiconductor sample having electron concentration of \(5\times10^{18}~\text{m}^{-3},\) hole concentration of \(5\times10^{19}~\text{m}^{-3},\) electron mobility of \(2.0~\text{m}^2~\text{V}^{-1}\text{s}^{-1}\) and hole mobility of \(0.01~\text{m}^2\text{V}^{-1}~\text{s}^{-1}?\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
(Take charge of an electron as \(1.6\times10^{-19}~\text{C})\)
1. \(0.59~(\Omega\text-\text{m})^{-1}\)
2. \(1.20~(\Omega\text-\text{m})^{-1}\)
3. \(1.68~(\Omega\text-\text{m})^{-1}\)
4. \(1.83~(\Omega\text-\text{m})^{-1}\)
Subtopic: Energy Band theory |
63%
Level 2: 60%+
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In the given circuit the current through the Zener diode is:
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
1. \(3.3~\text{mA}\)
2. \(2.5~\text{mA}\)
3. \(5.5~\text{mA}\)
4. \(6.7~\text{mA}\)
Subtopic: Applications of PN junction |
58%
Level 3: 35%-60%
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The \(V\text-I\) characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is:
1. \(10\)
2. \(10^{-6}\)
3. \(100\)
4. \(10^6\)
Subtopic: PN junction |
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\(\mathrm{Ge ~and ~Si}\) diodes start conducting at \(0.3~\text{V}~\text{and}~0.7~\text{V}\) respectively. In the following figure if \(\mathrm{Ge}\) diode connection are reversed, the value of \({V}_0\) changes by:
(assume that the \(\mathrm{Ge}\) diode has a large breakdown voltage)
1. \(0.8~\text{V}\)
2. \(0.6~\text{V}\)
3. \(0.2~\text{V}\)
4. \(0.4~\text{V}\)
(assume that the \(\mathrm{Ge}\) diode has a large breakdown voltage)
1. \(0.8~\text{V}\)
2. \(0.6~\text{V}\)
3. \(0.2~\text{V}\)
4. \(0.4~\text{V}\)
Subtopic: Applications of PN junction |
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Level 3: 35%-60%
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