The forward-biased diode connection is:

1.		2.
3.		4.

The logic circuit shown above is equivalent to :

1.
2.
3.
4.

Identify the operation performed by the circuit given below:

1. \(\text{OR}\)
2. \(\text{NOT}\)
3. \(\text{NAND}\)
4. \(\text{AND}\)

Draw the output signal \(Y\) in the given combination of gates :

1.
2.
3.
4.

The temperature dependence of resistances of \(\mathrm{Cu}\) and undoped \(\mathrm{Si}\) in the temperature range \(300\text-400~\text{K}\), is best described by:

If \(a, b, c, d\) are inputs to a gate and \(x\) is its output, then, as per the following time graph, the gate is:

1. NOT
2. AND
3. OR
4. NAND

The Zener diode has a voltage, \(V_z=30~\text{V}.\) The current passing through the diode for the following circuit is:

A \(5~\text{V}\) battery is connected across the points \(X\) and \(Y\). Assume \(D_1\) and \(D_2\) to be normal silicon diodes. Find the current supplied by the battery if the \(+\)ve terminal of the battery is connected to point \(X\). [Given: Barrier potential of Silicon = \(0.7~\text{V}\)] 

 
1. \(0.5~\text{A}\)
2. \(1.5~\text{A}\)
3. \(0.86~\text{A}\)
4. \(0.43~\text{A}\)

Zener breakdown occurs in a \(\mathrm{p\text{-}n}\) junction having \(\mathrm{p}\) and \(\mathrm{n}\) both: