1. | \(V_{A B}=i\cdot5+0.6\) |
2. | \(V_{A B}=i\cdot5-0.6\) |
3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |
1. | \(1\) A, \(2\) A | 2. | \(2\) A, \(1\) A |
3. | \(4\) A, \(2\) A | 4. | \(2\) A, \(4\) A |
1. | increase its electrical resistivity |
2. | increase its electrical conductivity |
3. | increase its life |
4. | enable it to tolerate higher voltage |
1. | decreases for conductors but increases for semiconductors. |
2. | increases for both conductors and semiconductors. |
3. | decreases for both conductors and semiconductors. |
4. | increases for conductors but decreases for semiconductors. |
Assertion (A): | Thickness of depletion layer is fixed in all semiconductor devices. |
Reason (R): | No free-charge carriers are available in the depletion layer. |
1. | Both (A) and (R) are True and (R) is the correct explanation of (A). |
2. | Both (A) and (R) are True but (R) is not the correct explanation of (A). |
3. | (A) is True but (R) is False. |
4. | (A) is False but (R) is True. |
1. | only \(D_3\) | 2. | \(D_1\) and \(D_3\) |
3. | all of the diodes | 4. | none of the diodes |
1. | conductor |
2. | insulator |
3. | semiconductor |
4. | none of the above |
1. | Indium | 2. | Antimony |
3. | Germanium | 4. | Carbon |