The dependence of resistivity \((\rho)\) on the temperature \((T)\) of a semiconductor is, roughly, represented by:

1.		2.
3.		4.

Current through the \(2~\Omega\)$$ resistance in the electrical network shown is:

Two batteries, one of emf \(18~\text{V}\) and internal resistance \(2~\Omega\) and the other of emf \(12\) V and internal resistance \(1~\Omega\), are connected as shown. Reading of the voltmeter is:
(if voltmeter is ideal)

1. \(14\) V
2. \(15\) V
3. \(18\) V
4. \(30\) V

A potential divider is used to give outputs of \(2~\text{V}\) and \(3~\text{V}\) from a \(5~\text{V}\) source, as shown in the figure.

What is the reading of the voltmeter of resistance \(1200~\Omega\) connected in the following circuit diagram? 

1. \(2.5\) V

2. \(5.0\) V

3. \(7.5\) V

4. \(40\) V

Power consumed in the given circuit is \(P_1\). On interchanging the position of \(3~\Omega\)$$ and \(12~\Omega\)$$ resistances, the new power consumption is \(P_2\). The ratio of \(\frac{P_2}{P_1}\) is:
     

For the given circuit, the value of the resistance in which the maximum heat is produced is:
          
1. \(2~\Omega\)
2. \(6~\Omega\)
3. \(4~\Omega\)
4. \(12~\Omega\)$$

A charged particle having drift velocity of \(7.5\times10^{-4}~\text{ms}^{-1}\) in an electric field of \(3\times10^{-10}~\text{Vm}^{-1}\), has mobility of: 
1. \(2.5\times 10^{6}~\text{m}^2\text{V}^{-1}\text{s}^{-1}\)
2. \(2.5\times 10^{-6}~\text{m}^2\text{V}^{-1}\text{s}^{-1}\)
3. \(2.25\times 10^{-15}~\text{m}^2\text{V}^{-1}\text{s}^{-1}\)
4. \(2.25\times 10^{15}~\text{m}^2\text{V}^{-1}\text{s}^{-1}\)

The figure below shows a network of currents. The current \(i\) will be:

1. \(3~\text{A}\)
2. \(13~\text{A}\)
3. \(23~\text{A}\)
4. \(-3~\text{A}\)