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Q. No.As the temperature increases, the electrical resistance:
1.
decreases for conductors but increases for semiconductors
2.
increases for both conductors and semiconductors
3.
decreases for both conductors and semiconductors
4.
increases for conductors but decreases for semiconductors
Subtopic: Â Energy Band theory |
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In the given circuits (a), (b) and (c), the potential drop across the two \({\mathrm{p\text-n}}\) junctions are equal in:
| 1. | both circuits (a) and (c) |
| 2. | circuit (a) only |
| 3. | circuit (b) only |
| 4. | circuit (c) only |
Subtopic: Â PN junction |
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In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
| 1. | only \(D_3\) |
| 2. | \(D_1\) and \(D_3\) |
| 3. | all of the diodes |
| 4. | none of the diodes |
Subtopic: Â PN junction |
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When a \(p\)-type semi-conductor is put in an electric field \(\overrightarrow E\) the electrons in the valence band, on average,
| 1. | flow in the direction of the \(\overrightarrow E\) and cause a current opposite to \(\overrightarrow E\) |
| 2. | flow opposite to \(\overrightarrow E\) and cause a current along \(\overrightarrow E\) |
| 3. | flow along \(\overrightarrow E\) and cause a current along \(\overrightarrow E\) |
| 4. | flow opposite to \(\overrightarrow E\) and cause a current opposite to \(\overrightarrow E\) |
Subtopic: Â Types of Semiconductors |
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In half-wave rectification, if the input frequency is \(60\) Hz, then the output frequency would be:
1. \(120\) Hz
2. zero
3. \(30\) Hz
4. \(60\) Hz
1. \(120\) Hz
2. zero
3. \(30\) Hz
4. \(60\) Hz
Subtopic: Â Rectifier |
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The resistance between \(A\) and \(B\) is
| 1. | \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\) |
| 2. | \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\) |
| 3. | \(100~\Omega\) |
| 4. | \(200~\Omega\) |
Subtopic: Â PN junction |
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The circuit shown in figure is given an input signal \(V_i,\) which varies with time and the corresponding output is \(V_o.\) Then,
| 1. | \(V_o=V_i+E\) |
| 2. | \(V_o=V_i-E\) |
| 3. | \(V_o=V_i,\) only when \(V_i>E\) |
| 4. | \(V_o=V_i,\) only when \(V_i<E\) |
Subtopic: Â PN junction |
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The voltage \(V_{AB}=20~V\) at its peak value, and is sinusoidal in time. The current \(i\) (in amperes), when plotted as a function of time, is given by:
(Consider the diodes as ideal.)
(Consider the diodes as ideal.)
| 1. |  |
2. |  |
| 3. |  |
4. |  |
Subtopic: Â PN junction |
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
| 1. | \(V_{A B}=i\cdot5+0.6\) |
| 2. | \(V_{A B}=i\cdot5-0.6\) |
| 3. | \(V_{A B}=i\cdot5+(0.6-5)\) |
| 4. | \(V_{A B}=i\cdot5+\left(0.6+5\right)\) |
Subtopic: Â PN junction |
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A \(\mathrm{p\text-n}\) junction has an electric field of \(6\times 10^{5}\) V/m in the junction and the junction width is \(500\) nm. The height of the potential barrier is:
1. \(0.6\) V
2. \(0.3\) V
3. \(0.5\) V
4. \(0.25\) V
1. \(0.6\) V
2. \(0.3\) V
3. \(0.5\) V
4. \(0.25\) V
Subtopic: Â PN junction |
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