The electron concentration in an \(\mathrm{n\text-}\)type semiconductor is the same as the hole concentration in a \(\mathrm{p\text{-}}\)type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

1.	current in \(\mathrm{n\text-}\)type \(>\) current in \(\mathrm{p\text{-}}\)type.
2.	no current will flow in \(\mathrm{p\text{-}}\)type, current will only flow in \(\mathrm{n\text-}\)type.
3.	current in \(\mathrm{n\text-}\)type \(=\) current in \(\mathrm{p\text{-}}\)type.
4.	current in \(\mathrm{p\text{-}}\)type \(>\) current in \(\mathrm{n\text-}\)type.

For the given circuit, the input digital signals are applied at the terminals \(A\), \(B\) and \(C\). What would be the output at terminal \(Y\)?
 

1.
2.
3.
4.

Following diagram performs the logic function of:
    
1. AND gate
2. NAND gate
3. OR gate
4. XOR gate

The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:

If a full-wave rectifier circuit is operating from \(50~\text{Hz}\) mains, the fundamental frequency in the ripple will be:
1. \(25~\text{Hz}\)
2. \(50~\text{Hz}\)
3. \(70.7~\text{Hz}\)
4. \(100~\text{Hz}\)

Reverse bias applied to a junction diode:

The current \((I)\) in the circuit will be:

The following truth table represent which logic gate:

1.  XOR
2.  NOT
3.  NAND
4.  AND

For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?