CC, SiSi, and GeGe have the same lattice structure. Why is the CC insulator?

1. because ionization energy for CC is the least in comparison to SiSi and GeGe.
2. because ionization energy for CC is highest in comparison to SiSi and GeGe.
3. the number of free electrons for conduction in GeGe and SiSi is significant but negligibly small for CC.
4. both (2) and (3).

Subtopic:  Energy Band theory |
 74%
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Suppose a pure SiSi crystal has 5×1028 atoms m−35×1028 atoms m−3It is doped by a 11 ppm concentration of pentavalent AsAs. The number of electrons and holes are, respectively:
(Given: ni=1.5×1016 m−3ni=1.5×1016 m−3)
1. 5×1022 m−3,4.5×109 m−35×1022 m−3,4.5×109 m−3
2. 4.5×109 m−3,5×1022 m−34.5×109 m−3,5×1022 m−3
3. 5×1022 m−3,5×1022 m−35×1022 m−3,5×1022 m−3
4. 4.5×109 m−3,4.5×109 m−34.5×109 m−3,4.5×109 m−3
Subtopic:  Types of Semiconductors |
 60%
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Why can't we take one slab of p-type semiconductor and physically join it to another slab of n-type semiconductor to get a p-n junction?

1. the diffusion of majority charge carriers will not occur.
2. the junction will behave as a discontinuity for the flowing charge carriers.
3. the junction will behave as a continuity for the flowing charge carriers.
4. both (1) and (2).

Subtopic:  PN junction |
 78%
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The V-IV-I characteristic of a silicon diode is shown in the figure. The resistance of the diode at ID=15 mAID=15 mA is: 

 
1. 20 Î©20 Î©
2. 30 Î©30 Î©
3. 15 Î©15 Î©
4. 10 Î©10 Î©

Subtopic:  PN junction |
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The (V-I)(V-I) characteristic of a silicon diode is shown in the figure. The resistance of the diode at VD=−10VD=−10 V is:

     
1. 1×107 Î© 1×107 Î© 
2. 2×107 Î© 2×107 Î© 
3. 3×107 Î© 3×107 Î© 
4. 4×107 Î© 4×107 Î© 

Subtopic:  PN junction |
 81%
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In a Zener regulated power supply, a Zener diode with VZ=6 VVZ=6 V  is used for regulation. The load current is to be 4.0 mA4.0 mA and the unregulated input is 10.0 V10.0 V. The value of the series resistor RSRS will be: (Assume IZ=5IL)(Assume IZ=5IL)
1. less  than 100 Î©100 Î©
2. zero
3. infinite
4. 150 Î©150 Î©
Subtopic:  Applications of PN junction |
 52%
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Which one of the following is not true for the photodiodes?

1. The current in the forward bias is more than the current in the reverse bias.
2. Photodiodes are preferably used in the reverse bias condition for measuring light intensity.
3. Photodiodes are preferably used in the forward bias condition for measuring light intensity
4. In photodiodes, only a small portion of the incident photons gets converted to electric current.

Subtopic:  Applications of PN junction |
 64%
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Which material is preferred for solar cells?
1. SiSi
2. GaAsGaAs
3. CdSCdS
4. both SiSi and GaAsGaAs

Subtopic:  Applications of PN junction |
 60%
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The output waveform (Y) of the AND gate for the following inputs A and B given in the figure is:

    

1.
2.
3.
4. None of these
Subtopic:  Logic gates |
 78%
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The output waveform (YY) of the OROR gate for the following inputs AA and BB given in the figure is:

   

1.
2.
3.
4. none of these
Subtopic:  Logic gates |
 82%
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