The lattice site in a pure crystal cannot be occupied by ......... .
1. Molecule
2. Ion
3. Electron
4. Atom
Graphite cannot be classified as ...........
1. Conducting solid.
2. Network solid.
3. Covalent solid.
4. Ionic solid.
Cations are present in the interstitial sites in ............ .
1. Frenkel defect.
2. Schottky defect.
3. Vacancy defect.
4. Metal deficiency defect.
Schottky defect is observed in crystals when:
1. | Some cations move from their lattice site to interstitial sites. |
2. | Equal number of cations and anions are missing from the lattice. |
3. | Some lattice sites are occupied by electrons. |
4. | Some impurities are present in the lattice. |
Chargewise p-type semiconductor is -
1. Positive.
2. Neutral.
3. Negative.
4. Depends on the concentration of p impurity.
To get a n-type semiconductor from silicon, it should be doped with a substance with valency -
1. 2
2. 1
3. 3
4. 5
The total number of tetrahedral voids in the face centered unit cell is -
1. 6
2. 8
3. 10
4. 12
AgBr(s) crystals shows the following defect/s
I. Schottky defect
II. Frenkel defect
III. Metal excess defect
IV Metal deficiency defect
1. I and II
2. III and IV
3. I and III
4. II and IV
The most efficient packing is present in -
1. HCP and BCC
2. HCP and CCP
3. BCC and CCP
4. BCC and Simple cubic cell
The percentage of empty space in a body centred cubic arrangement is ......... .
1. 74
2. 68
3. 32
4. 26