For the given circuit of the \(\mathrm{p\text-n}\) junction diode, which of the following statements is correct?

         

1. In F.B. the voltage across \(R\) is \(V.\)
2. In R.B. the voltage across \(R\) is \(V.\)
3. In F.B. the voltage across \(R\) is \(2V.\)
4. In R.B. the voltage across \(R\) is \(2V.\)

Subtopic:  PN junction |
 81%
Level 1: 80%+
AIPMT - 2002
Hints

Reverse bias applied to a junction diode:

1. lowers the potential barrier
2. raises the potential barrier
3. increases the majority carrier current
4. increases the minority carrier's current

Subtopic:  PN junction |
 75%
Level 2: 60%+
AIPMT - 2003
Hints

The barrier potential of a \(\mathrm{p\text-n}\) junction diode does not depend on:

1. diode design 2. temperature
3. forward bias 4. doping density
Subtopic:  PN junction |
 75%
Level 2: 60%+
AIPMT - 2003
Hints

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Of the diodes shown in the following diagrams, which one of the diodes is reverse biased?
 

1. 2.
3. 4.

Subtopic:  PN junction |
 85%
Level 1: 80%+
AIPMT - 2004
Hints

Identify the incorrect statement from the following:
1. The resistivity of a semiconductor increases with an increase in temperature.
2. Substances with an energy gap of the order of \(10~\text{eV}\) are insulators.
3. In conductors, the valence and conduction bands may overlap.
4. The conductivity of a semiconductor increases with an increase in temperature.
Subtopic:  Energy Band theory |
 81%
Level 1: 80%+
AIPMT - 2005
Hints

In a half-wave rectification, what is the output frequency if the input frequency is \(50~\text{Hz}?\)
1. \(50~\text{Hz}\)
2. \(100~\text{Hz}\)
3. \(25~\text{Hz}\)
4. \(60~\text{Hz}\)

Subtopic:  Rectifier |
 75%
Level 2: 60%+
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In the energy band diagram of a material shown below, the open circles and filled circles denote holes and electrons respectively. The material is a/an: 
      

1. \(\mathrm{p}\text-\)type semiconductor
2. insulator
3. metal
4. \(\mathrm{n}\text-\)type semiconductor
Subtopic:  Energy Band theory |
 76%
Level 2: 60%+
AIPMT - 2007
Hints

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be:
       

1. \(2.5~\text A\)  2. \(10.0~\text A\) 
3. \(1.43~\text A\)  4. \(3.13~\text A\) 
Subtopic:  PN junction |
 88%
Level 1: 80%+
NEET - 2016
Hints

The depletion layer in the \(\mathrm{p\text-n}\) junction region is caused by:
1. the drift of holes.
2. diffusion of charge carriers.
3. migration of impurity ions.
4. drift of electrons.
Subtopic:  PN junction |
 80%
Level 1: 80%+
Hints

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The LED:

1. is reverse-biased.
2. is forward-biased.
3. can be made of \(\mathrm{GaAs}.\)
4. both (2) and (3) are correct.
Subtopic:  Applications of PN junction |
 72%
Level 2: 60%+
Hints