Consider the following Statements A and B and identify the correct answer:
                   
A. For a solar-cell, the \(I\text-V\) characteristics lies in the IV quadrant of the given graph.
B. In a reverse-biased pn junction diode, the current measured in (\(\mu \text{A}\)), is due to majority charge carriers.
 
1. A is incorrect but B is correct.
2. Both A and B are correct.
3. Both A and B are incorrect.
4. A is correct but B is incorrect.
Subtopic:  Applications of PN junction |
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A solar cell is a:
1. forward biased zener diode.
2. type of light-emitting diode.
3. diode working on the principle of photo-voltaic effect.
4. type of photo-diode with external biasing.
Subtopic:  Applications of PN junction |
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The \(I\text-V\) characteristics shown above are exhibited by a:
1. light-emitting diode 2. zener-diode
3. photodiode 4. solar cell
Subtopic:  Applications of PN junction |
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Given below are two statements:
Statement I: Photovoltaic devices can convert optical radiation into electricity.
Statement II: Zener diode is designed to operate under reverse bias in the breakdown.
1. Statement I is incorrect but Statement II is correct.
2. Both Statement I and Statement II are correct.
3. Both Statement I and Statement II are incorrect.
4. Statement I is correct but Statement II is incorrect.
Subtopic:  Applications of PN junction |
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The incorrect statement about the property of a Zener diode is:
1. Zener voltage remains constant at the breakdown.
2. It is designed to operate under reverse bias.
3. The depletion region formed is very wide.
4. \(\mathrm{p}\) and \(\mathrm{n}\) regions of the Zener diode are heavily doped.
Subtopic:  Applications of PN junction |
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Given below are two statements:
Statement A: A Zener diode is connected in reverse bias when used as a voltage regulator.
Statement B: The potential barrier of \(\mathrm{p\text-n}\) junction lies between \(0.2\) V to \(0.3\) V.
1. Statement A is correct and Statement B is incorrect.
2. Statement A is incorrect and Statement B is correct.
3. Statement A and Statement B both are correct.
4. Statement A and Statement B both are incorrect.
Subtopic:  Applications of PN junction |
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An LED is constructed from a \(\mathrm{p\text{-}n}\) junction diode using \(\mathrm{GaAsP}\). The energy gap is \(1.9~\text{eV}\). The wavelength of the light emitted will be equal to:
1. \(10.4 \times 10^{-26} \text{m}\)
2. \(654~ \text{nm}\)
3. \(654~ \text{m}\)
4. \(654\times 10^{-11}~\text{m}\)

Subtopic:  Applications of PN junction |
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