In the circuit shown in the figure, \(V_A>V_B.\) Which of the diodes conduct?
            
1. only \(D_3\) 2. \(D_1\) and \(D_3\)
3. all of the diodes 4. none of the diodes
Subtopic:  PN junction |
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The current-voltage characteristic of an ideal \(\mathrm{p \text{-}n}\) junction diode is given by the graph as shown in the following figure:
               
This diode is connected with a resistance of \(5~\Omega\) in series with it as shown below:
                   
Which of the following shows the dependence of the voltage \(V_{AB}\) and the current \(i\), when the diode is forward-biased? (\(V_{AB}\) in volt, \(i\) in ampere)
 
1. \(V_{A B}=i\cdot5+0.6\)
2. \(V_{A B}=i\cdot5-0.6\)
3. \(V_{A B}=i\cdot5+(0.6-5)\)
4. \(V_{A B}=i\cdot5+\left(0.6+5\right)\)
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In the given circuits (a), (b) and (c), the potential drop across the two \({\mathrm{p\text-n}}\) junctions are equal in: 
        
1. both circuits (a) and (c)
2. circuit (a) only
3. circuit (b) only
4. circuit (c) only
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The resistance between \(A\) and \(B\) is
           
1. \(100~\Omega\) if \(V_A>V_B\) and \(200~\Omega\) if \(V_A<V_B\)
2. \(100~\Omega\) if \(V_A<V_B\) and \(200~\Omega\) if \(V_A>V_B\)
3. \(100~\Omega\)
4. \(200~\Omega\)
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The circuit shown in figure is given an input signal \(V_i,\) which varies with time and the corresponding output is \(V_o.\) Then,
                     
 
1. \(V_o=V_i+E\)
2. \(V_o=V_i-E\)
3. \(V_o=V_i,\) only when \(V_i>E\)
4. \(V_o=V_i,\) only when \(V_i<E\)
 
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A \(\mathrm{p\text-n}\) junction has an electric field of \(6\times 10^{5}\) V/m in the junction and the junction width is \(500\) nm. The height of the potential barrier is:
1. \(0.6\) V
2. \(0.3\) V
3. \(0.5\) V
4. \(0.25\) V
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Assume that the threshold voltage of a diode is \(0.7\) V, and the forward resistance is negligible. 
        
The current through the circuit is:
1. \(40\) mA 
2. \(54\) mA
3. \(33\) mA 
4. \(26\) mA
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In an unbiased \(\mathrm{p\text{-}n}\) junction, holes diffuse from the \(\mathrm{p\text{-}}\)regions to \(\mathrm{n\text{-}}\)regions because of: 
1. the attraction of free electrons of the \(\mathrm{n\text{-}}\)region.
2. the higher hole concentration in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. 
3. the higher concentration of electrons is in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. 
4. the potential difference across the \(\mathrm{p\text{-}n}\) junction. 
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The \((V\text-I)\) characteristic of a silicon diode is shown in the figure. The resistance of the diode at \(V_D=-10\) V is:

     
1. \(1\times10^7~\Omega~\)
2. \(2\times10^7~\Omega~\)
3. \(3\times10^7~\Omega~\)
4. \(4\times10^7~\Omega~\)

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Why can't we take one slab of p-type semiconductor and physically join it to another slab of n-type semiconductor to get a p-n junction?

1. the diffusion of majority charge carriers will not occur.
2. the junction will behave as a discontinuity for the flowing charge carriers.
3. the junction will behave as a continuity for the flowing charge carriers.
4. both (1) and (2).

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