In the given figure, a diode \(D\) is connected to an external resistance \(R = 100~\Omega\) and an EMF of \(3.5~\text{V}\). If the barrier potential developed across the diode is \(0.5~\text{V}\), the current in the circuit will be:
  
1. \(30~\text{mA}\)
2. \(40~\text{mA}\)
3. \(20~\text{mA}\)
4. \(35~\text{mA}\)

Subtopic:  PN junction |
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If in a \(\mathrm{p\text{-}n}\) junction, a square input signal of \(10~\text{V}\) is applied as shown, 

 
then the output across \(R_L\) will be:

1. 2.
3. 4.
Subtopic:  PN junction |
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The barrier potential of a \(\mathrm{p\text{-}n}\) junction depends on: 

(a) type of semiconductor material 
(b) amount of doping 
(c) temperature 

Which one of the following is correct?
1. (a) and (b) only
2. (b) only
3. (b) and (c) only
4. (a), (b) and (c)

Subtopic:  PN junction |
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In an unbiased \(\mathrm{p\text{-}n}\) junction, holes diffuse from the \(\mathrm{p\text{-}}\)regions to \(\mathrm{n\text{-}}\)regions because of: 
1. the attraction of free electrons of the \(\mathrm{n\text{-}}\)region.
2. the higher hole concentration in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. 
3. the higher concentration of electrons is in the \(\mathrm{p\text{-}}\)region than that in the \(\mathrm{n\text{-}}\)region. 
4. the potential difference across the \(\mathrm{p\text{-}n}\) junction. 
Subtopic:  PN junction |
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Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is:
    
1. \(0.75~\text{A}\)
2. zero
3. \(0.25~\text{A}\)
4. \(0.5~\text{A}\)

Subtopic:  PN junction |
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In a forward biasing of the p-n junction:
 
1. the positive terminal of the battery is connected to the p-side and the depletion region becomes thick.
2. the negative terminal of the battery is connected to the n-side and the depletion region becomes thin.
3. the positive terminal of the battery is connected to the n-side and the depletion region becomes thin.
4. the negative terminal of the battery is connected to the p-side and the depletion region becomes thick.

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In the following figure, the diodes which are forward biased are:
(a)
(b)
(c)
(d)

1. (a), (b) and (d)
2. (c) only
3. (a) and (c)
4. (b) and (d)

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Which of the following is an example of forward biasing?
 

1. 2.
3. 4.
Subtopic:  PN junction |
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