In a semiconducting material, the mobilities of electrons and holes are \(\mu_e\) and \(\mu_{h}\) respectively. Which of the following is true?
1. \(\mu_{e} > \mu _{h}\)
2. \(\mu_{e} < \mu _{h}\)
3. \(\mu_{e} = \mu _{h}\)
4. \(\mu_{e} <0; ~\mu _{h}>0\)

Subtopic:  Types of Semiconductors |
 68%
From NCERT
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The temperature (T) dependence of resistivity (ρ) of a semiconductor is represented by

1. 

2. 

3. 

4. 

Subtopic:  Energy Band theory |
 73%
From NCERT
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In a forward biased P-N junction diode, the potential barrier in the depletion region is of the form

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
 56%
From NCERT
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Different voltages are applied across a P-N junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
From NCERT
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If the following input signal is sent through a PN-junction diode, then the output signal across RL will be

 

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
 82%
From NCERT
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The curve between charge density and distance near P-N junction will be

1. 

2. 

3. 

4. 

Subtopic:  PN junction |
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The resistance of a germanium junction diode whose is shown in figure is Vk=0.3V


(1) 5 kΩ

(2) 0.2 kΩ

(3) 2.3 kΩ

(4) 102.3

Subtopic:  PN junction |
 71%
From NCERT
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In the half-wave rectifier circuit shown. Which one of the following wave forms is true for VCD, the output across C and D?

1. 

2. 

3. 

4. 

Subtopic:  Rectifier |
 87%
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A full-wave rectifier circuit along with the input and output voltages is shown in the figure.

The contribution to the output voltage from diode – 2 is :

(1) A, C                       

(2) B, D

(3) B, C                       

(4) A, D

Subtopic:  Rectifier |
 86%
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The i-V characteristic of a P-N junction diode is shown below. The approximate dynamic resistance of the P-N junction when a forward bias of 2 volt is applied

(1) 1 Ω

(2) 0.25 Ω 

(3) 0.5 Ω

(4) 5 Ω

Subtopic:  PN junction |
 65%
From NCERT
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