The breakdown in a reverse-biased p-n junction is more likely to occur due to
a. | the large velocity of the minority charge carriers if the doping concentration is small |
b. | the large velocity of the minority charge carriers if the doping concentration is large |
c. | strong electric field in a depletion region if the doping concentration is small |
d. | strong electric field in the depletion region if the doping concentration is large |
1. (a, d)
2. (b, d)
3. (c, d)
4. (b, c)
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